Silicon Monocrystalline ingot
| Growth Method | MCZ | GDFZ | NTD |
| Diameter (mm) | 50 ~ 200 |
| Diameter Tolerance (mm) | ± 0.5 |
| TypeDopant | N: ArsenicAntimonyPhosphorus
Red Phosphorus |
| P: Boron |
| Resistivity (Ω.cm) | 1 × 10-3 ~ 100 | 1 × 10-3 ~ 20,000 | 30-600 |
| Crystal Onentation | |
Here is few of our reference customer:
ABB, Powerex, OSI, Dynex, Infenion, Semtech, UDT, Fargo, Semikron, Microsemi, Vishay, TFT, Semicoa, Amonix, Avago, MaCom, Quicksil, APT, Solid State Device Inc, Silicon Power, DRS, Proton, Lite-on, Taiwan Semi, Pan Jit, Rectron,Epistar,Ubilux,Arima,Tyntek, Optotech, Epitek, NTT...etc. and also has some China/US customers.
